BC817K.../BC818K...
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
BC817K-16
6As
1=B 2=E 3=C -
-
-
SOT23
BC817K-16W
6As
1=B 2=E 3=C -
-
-
SOT323
BC817K-25
6Bs
1=B 2=E 3=C -
-
-
SOT23
BC817K-25W
6Bs
1=B 2=E 3=C -
-
-
SOT323
BC817K-40
6Cs
1=B 2=E 3=C -
-
-
SOT23
BC817K-40W
6Cs
1=B 2=E 3=C -
-
-
SOT323
BC818K-16W
6Es
1=B 2=E 3=C -
-
-
SOT323
BC818K-40
6Gs
1=B 2=E 3=C -
-
-
SOT23
1
Package
2011-09-19
BC817K.../BC818K...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC817...
45
BC818...
25
Collector-base voltage
Unit
VCBO
BC817...
50
BC818...
30
5
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
500
1000
mW
TS ≤ 115 °C, BC817K, BC818K
500
TS ≤ 130 °C, BC817KW, BC818KW
250
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
mA
150
°C
-65 ... 150
Value
BC817K, BC818K
≤ 70
BC817KW, BC818KW
≤ 80
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2011-09-19
BC817K.../BC818K...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0 , BC817...
45
-
-
IC = 10 mA, IB = 0 , BC818...
25
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC817...
50
-
-
IC = 10 µA, IE = 0 , BC818...
30
-
-
5
-
-
V(BR)EBO
V
-
V(BR)CBO
Emitter-base breakdown voltage
Unit
V
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 25 V, IE = 0
-
-
0.1
VCB = 25 V, IE = 0 , TA = 150 °C
-
-
50
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
hFE
IC = 100 mA, VCE = 1 V, hFE -grp.16
100
160
250
IC = 100 mA, VCE = 1 V, hFE -grp.25
160
250
400
IC = 100 mA, VCE = 1 V, hFE -grp.40
250
350
630
IC = 500 mA, VCE = 1 V, all hFE-grps.
40
-
-
VCEsat
-
-
0.7
VBEsat
-
-
1.2
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
1Pulse
test: t < 300µs; D < 2%
3
2011-09-19
BC817K.../BC818K...
Electrical Characteristics at T A = 25°C, unless otherwise specified
Symbol
Parameter
Values
Unit
min.
typ.
max.
fT
-
170
-
MHz
Ccb
-
3
-
pF
Ceb
-
40
-
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
4
2011-09-19
BC817K.../BC818K...
DC current gain hFE = ƒ(IC)
VCE = 1 V
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE
10 3
hFE
10
3
10 2
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10 1 -5
10
10
-4
10
-3
10
-2
10
-1
10 1 -5
10
0
A 10
10
-4
10
-3
10
-2
10
IC
-1
0
A 10
IC
DC current gain hFE = ƒ(IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
hFE-grp.40
10 3
10 3
ΙC
BC 817/818
EHP00223
mA
150 ˚C
25 ˚C
-50 ˚C
10 2
hFE
5
10 2
10 1
105 °C
85 °C
65 °C
25 °C
-40 °C
5
10 0
5
10 1 -5
10
10
-4
10
-3
10
-2
10
-1
10 -1
0
A 10
IC
0
0.2
0.4
0.6
V
0.8
VCEsat
5
2011-09-19
BC817K.../BC818K...
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
BC 817/818
10 3
ΙC
EHP00222
10 5
mA
Ι CBO
150 ˚C
25 ˚C
-50 ˚C
10 2
BC 817/818
EHP00221
nA
10 4
5
max
10 3
10 1
5
typ
10 2
10 0
10 1
5
10 -1
0
1.0
2.0
3.0
V
10 0
4.0
0
50
100
V BEsat
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
150
˚C
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
BC817K, BC818K
10 3
EHP00218
55
pF
MHz
5
45
CCB/CEB
fT
BC 817/818
40
CEB
35
30
10 2
25
20
5
15
10
CCB
5
10
1
10 0
10 1
10 2
mA
0
0
10 3
ΙC
2
4
6
8
10
12
14
16
V
20
VCB/VEB
6
2011-09-19
BC817K.../BC818K...
Total power dissipation P tot = ƒ(TS)
Total power dissipation P tot = ƒ(TS)
BC817K, BC818K
BC817KW, BC818KW
550
550
mW
450
400
400
Ptot
450
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
15
30
45
60
75
90 105 120
0
0
150
15
30
45
60
90 105 120 °C
75
150
TS
Permissible Pulse Load RthJS = ƒ(tp)
BC817K, BC818K
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
BC817K, BC818K
10 3
Ptotmax/PtotDC
RthJS
10 2
10 1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
-2
-
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
s
10
10 0 -6
10
0
TP
10
-5
10
-4
10
-3
10
-2
s
10
0
TP
7
2011-09-19
BC817K.../BC818K...
Permissible Puls Load RthJS = ƒ (t p)
Permissible Pulse Load
BC817KW, BC818KW
Ptotmax/PtotDC = ƒ(tp )
BC817KW, BC818KW
10 3
10 3
Ptotmax/PtotDC
K/W
RthJS
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
8
2011-09-19
Package SOT23
BC817K.../BC818K...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
9
2011-09-19
Package SOT323
BC817K.../BC818K...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
10
2011-09-19
BC817K.../BC818K...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11
2011-09-19
